CMOS-Compatible Antiferroelectric-Dielectric Capacitors for Multifunctional Energy Storage and Tunable Electronics
This work presents a CMOS-compatible multilayer platform integrating energy storage and tunable varactor functionality within a compact system. By co-integrating antiferroelectric (AFE) and dielectric (DE) layers, the design achieves tunability up to 28%, an energy density of 52 J/cm3, and enhanced electrical breakdown strength of 5.8 MV/cm. The proposed architecture enables multifunctionality in a scalable on-chip approach, optimizing both energy efficiency and adaptive electronic applications. This experimental advancement offers a promising foundation for compact, high-performance AFE-based alternative to conventional single-purpose ferroelectric (FE) devices.
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
2025-06-29
979-8-3315-1381-8
1197
1200
REVIEWED
EPFL
Event name | Event acronym | Event place | Event date |
Orlando, FL, USA | 2025-06-29 - 2025-07-03 | ||