Notice détaillée
Titre
Bouvet, Didier
Sciper ID
100552
Laboratoires affiliés
CMI
Publications
Abrupt current switching due to impact ionization effects in Omega-MOSFET on low doped bulk silicon
Fabrication of polysilicon gated-nanowires and their application for pA precision current measurements
Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic
Heavily Doped Junctionless Vertical Slit FETs with Slit Width Below 20 nm
Investigation of oxidation-induced strain in a top-down Si nanowire platform
LPCVD deposition of nanograin polysilicon ultra-thin films
Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility
Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs
Towards fabrication of Vertical Slit Field Effect Transistor (VeSFET) as new device for nano-scale CMOS technology
Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories
Voir toutes les publications (74)
Fabrication of polysilicon gated-nanowires and their application for pA precision current measurements
Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic
Heavily Doped Junctionless Vertical Slit FETs with Slit Width Below 20 nm
Investigation of oxidation-induced strain in a top-down Si nanowire platform
LPCVD deposition of nanograin polysilicon ultra-thin films
Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility
Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs
Towards fabrication of Vertical Slit Field Effect Transistor (VeSFET) as new device for nano-scale CMOS technology
Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories
Voir toutes les publications (74)
Employé pour
Bouvet, D.
Bouvet, D
Bouvet, D
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