This paper reports an alternative simple fabrication process for twin gate junctionless Vertical Slit Field Effect Transistors. N-type devices have been successfully manufactured on SOI substrates with a doping density 5×1018 atoms/cm3. The devices demonstrate up to six decades of Ion/Ioff ratio and a sub- threshold swing of 90 mV/decade relative to a slit width of approximately 10 nm.
Titre
Heavily Doped Junctionless Vertical Slit FETs with Slit Width Below 20 nm
Publié dans
Mixed Design of Integrated Circuits and Systems (MIXDES), 2013 Proceedings of the 20th International Conference
Pages
397-400
Présenté à
Mixed Design of Integrated Circuits & Systems, 2013 MIXDES'13. MIXDES-20th International Conference, Gdynia, Poland, 20-22 June, 2013
Date
2013
ISBN
978-83-63578-00-8
Date de création de la notice
2013-08-07