Laser chemical vapor deposition of platinum: conductivity measurements and Schottky diodes

Laser chem. vapor deposition (LCVD) of Pt from Pt bishexafluoroacetylacetonate was studied. The elec. cond. of the metallic deposit was investigated as a function of the writing speed, the vapor pressure of the organometallic compd., and the laser power at 458 and 514 nm. The current-voltage characteristics of Schottky diodes made by LCVD of Pt on n-GaAs was compared for 2 different LCVD mechanisms. Suggestions to optimize the LCVD process are given.


Published in:
Laser Processing and Diagnostics (II), 95-99
Presented at:
Symposium XI, E-MSR Spring meeting on laser processing and diagnostics, Strasbourg, France, June 17th-20th, 1986
Year:
1986
Publisher:
Les Ulis, Editions de Physique
Keywords:
Note:
Copyright 2003 ACS
CAPLUS
AN 1987:647705
CAN 107:247705
76-2
Electric Phenomena
74
Lab. Chim. Tech.,Ec. Polytech. Fed.,Lausanne,Switz. FIELD URL:
Conference
56EDAY
written in English.
Process optimization (of laser-assisted deposition of platinum from decompn. of platinum bis(hexafluoroacetylacetonate); Photolysis (of platinum bis(hexafluoroacetylacetonate) in platinum deposition on gallium arsenide); Electric conductivity and conduction (of platinum films, from laser-induced decompn. of platinum bis(hexafluoroacetylacetonate); Diodes (Schottky, platinum-gallium arsenide, from platinum deposition from laser-induced decompn. of platinum bis(hexafluoroacetylacetonate); Electric conductors (film, platinum, from laser-induced decompn. of platinum bis(hexafluoroacetylacetonate)
Laboratories:




 Record created 2011-02-01, last modified 2018-01-28


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