Laser chemical vapor deposition of platinum: conductivity measurements and Schottky diodes
Laser chem. vapor deposition (LCVD) of Pt from Pt bishexafluoroacetylacetonate was studied. The elec. cond. of the metallic deposit was investigated as a function of the writing speed, the vapor pressure of the organometallic compd., and the laser power at 458 and 514 nm. The current-voltage characteristics of Schottky diodes made by LCVD of Pt on n-GaAs was compared for 2 different LCVD mechanisms. Suggestions to optimize the LCVD process are given.
Keywords: 1303-00-0 (Gallium arsenide) Role: USES (Uses) (Schottky diodes from platinum film deposition on) ; 65353-51-7 Role: RCT (Reactant) ; RACT (Reactant or reagent) (film deposition of platinum from laser-induced decompn. of) ; 7440-06-4 (Platinum) Role: PEP ( ; laser deposition platinum conductor ; Schottky diode platinum ; cond platinum film ; fluoroacetylacetonate platinum laser decompn
Copyright 2003 ACS
Lab. Chim. Tech.,Ec. Polytech. Fed.,Lausanne,Switz. FIELD URL:
written in English.
Process optimization (of laser-assisted deposition of platinum from decompn. of platinum bis(hexafluoroacetylacetonate); Photolysis (of platinum bis(hexafluoroacetylacetonate) in platinum deposition on gallium arsenide); Electric conductivity and conduction (of platinum films, from laser-induced decompn. of platinum bis(hexafluoroacetylacetonate); Diodes (Schottky, platinum-gallium arsenide, from platinum deposition from laser-induced decompn. of platinum bis(hexafluoroacetylacetonate); Electric conductors (film, platinum, from laser-induced decompn. of platinum bis(hexafluoroacetylacetonate)
Record created on 2011-02-01, modified on 2016-08-09