Laser chem. vapor deposition (LCVD) of Pt from Pt bishexafluoroacetylacetonate was studied. The elec. cond. of the metallic deposit was investigated as a function of the writing speed, the vapor pressure of the organometallic compd., and the laser power at 458 and 514 nm. The current-voltage characteristics of Schottky diodes made by LCVD of Pt on n-GaAs was compared for 2 different LCVD mechanisms. Suggestions to optimize the LCVD process are given.