Laser chemical vapor deposition of platinum: conductivity measurements and Schottky diodes
Laser chem. vapor deposition (LCVD) of Pt from Pt bishexafluoroacetylacetonate was studied. The elec. cond. of the metallic deposit was investigated as a function of the writing speed, the vapor pressure of the organometallic compd., and the laser power at 458 and 514 nm. The current-voltage characteristics of Schottky diodes made by LCVD of Pt on n-GaAs was compared for 2 different LCVD mechanisms. Suggestions to optimize the LCVD process are given.
1986
Les Ulis
95
99
Copyright 2003 ACS
CAPLUS
AN 1987:647705
CAN 107:247705
76-2
Electric Phenomena
74
Lab. Chim. Tech.,Ec. Polytech. Fed.,Lausanne,Switz. FIELD URL:
Conference
56EDAY
written in English.
Process optimization (of laser-assisted deposition of platinum from decompn. of platinum bis(hexafluoroacetylacetonate); Photolysis (of platinum bis(hexafluoroacetylacetonate) in platinum deposition on gallium arsenide); Electric conductivity and conduction (of platinum films, from laser-induced decompn. of platinum bis(hexafluoroacetylacetonate); Diodes (Schottky, platinum-gallium arsenide, from platinum deposition from laser-induced decompn. of platinum bis(hexafluoroacetylacetonate); Electric conductors (film, platinum, from laser-induced decompn. of platinum bis(hexafluoroacetylacetonate)
REVIEWED
EPFL
| Event name | Event place | Event date |
Strasbourg, France | June 17th-20th, 1986 | |