Infoscience

Journal article

Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) heterojunctions

We have recently shown that in II-VI/III-V heterojunctions and related devices fabricated by molecular beam epitaxy, the II/VI flux ratio employed during the early stages of II-VI growth can be used to control the local interface composition and the band alignment. Here we demonstrate that the local interface composition in pseudomorphic, strained ZnSe/GaAs(001) heterostructures as well as lattice-matched ZnSe/In0.04Ga0.96As(001) heterostructures also have a dramatic effect on the nucleation of native stacking fault defects. Such extended defects have been associated with the early degradation of blue-green lasers. We found, in particular, that Se-rich interfaces consistently exhibited a density of Shockley stacking fault pairs below our detection limit and three to four orders of magnitude lower than those encountered at interfaces fabricated in Zn-rich conditions. (C) 1997 American Vacuum Society. [S0734-211X(97)09104-X].

    Keywords: ZNSE-GAAS ; DISLOCATION NUCLEATION ; STRUCTURAL-PROPERTIES ; STACKING-FAULTS ; DEEP LEVELS ; HETEROSTRUCTURES ; EPITAXY ; FILMS

    Note:

    Univ minnesota,dept chem engn & mat sci,minneapolis,mn 55455. ecole polytech fed lausanne,inst micro & optoelect,dept phys,ch-1015 lausanne,switzerland. cnr,ist icmat,i-00016 rome,italy. univ trieste,dipartimento fis,i-34127 trieste,italy. Heun, S, LAB NAZL TASC INFM,AREA RIC,PADRICIANO 99,I-34012 TRIESTE,ITALY.

    ISI Document Delivery No.: XT088

    Times Cited: 9

    Cited Reference Count: 32

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    Record created on 2007-08-31, modified on 2016-08-08

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