conference paper
Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K
2016
2016 74th Annual Device Research Conference (DRC)
Type
conference paper
Web of Science ID
WOS:000389535400090
Author(s)
Date Issued
2016
Publisher
Publisher place
New York
Published in
2016 74th Annual Device Research Conference (DRC)
Total of pages
2
Start page
1
End page
2
Editorial or Peer reviewed
NON-REVIEWED
Written at
EPFL
| Event name | Event place | Event date |
Newark, DE, USA | 19-22 June 2016 | |
Available on Infoscience
October 17, 2016
Use this identifier to reference this record