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  4. Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K
 
conference paper

Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K

Biswas, Arnab  
•
Tomar, Saurabh
•
Ionescu, Adrian M.  
2016
2016 74th Annual Device Research Conference (DRC)
2016 74th Annual Device Research Conference (DRC)
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