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conference paper
Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K
2016
2016 74th Annual Device Research Conference (DRC)
Use this identifier to reference this record
Type
conference paper
Web of Science ID
WOS:000389535400090
Authors
Publication date
2016
Publisher
Published in
2016 74th Annual Device Research Conference (DRC)
Publisher place
New York
Total of pages
2
Start page
1
End page
2
Peer reviewed
NON-REVIEWED
Event name | Event place | Event date |
Newark, DE, USA | 19-22 June 2016 | |
Available on Infoscience
October 17, 2016