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  4. High Tunning Range AISi RF MEMS Capacitors Fabricated with Sacrificial Amorphous Silicon Surface Micromachining
 
conference paper

High Tunning Range AISi RF MEMS Capacitors Fabricated with Sacrificial Amorphous Silicon Surface Micromachining

Fritschi, R.  
•
Frédérico, S.
•
Hibert, C.  
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2003
Microelectronic Engineering
Micro and Nano Engineering 2003 (MNE 2003)
  • Details
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Type
conference paper
DOI
10.1016/j.mee.2004.03.015
Web of Science ID

WOS:000222145400079

Author(s)
Fritschi, R.  
Frédérico, S.
Hibert, C.  
Flückiger, Ph.
Renaud, Ph.  
Tsamados, D.
Boussey, J.
Chovet, A.
Udrea, F.
Curty, J.-P.
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Date Issued

2003

Published in
Microelectronic Engineering
Volume

73–74

Start page

447

End page

451

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Event nameEvent placeEvent date
Micro and Nano Engineering 2003 (MNE 2003)

Cambridge, UK

22-25 September 2003

Available on Infoscience
October 10, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/12781
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