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  4. Local volume inversion and corner effects in triangular gate-all-around MOSFETs
 
conference paper

Local volume inversion and corner effects in triangular gate-all-around MOSFETs

Moselund, K. E.  
•
Bouvet, D.  
•
Tschuor, L.
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2006
2006 European Solid-State Device Research Conference
ESSDERC 2006
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Type
conference paper
DOI
10.1109/ESSDER.2006.307712.
Web of Science ID

WOS:000245038000085

Author(s)
Moselund, K. E.  
Bouvet, D.  
Tschuor, L.
Pott, V.  
Dainesi, P.  
Ionescu, A. M.  
Date Issued

2006

Published in
2006 European Solid-State Device Research Conference
Start page

359

End page

362

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Event name
ESSDERC 2006
Available on Infoscience
May 16, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/6988
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