research article
Processing and properties of thin film pyroelectric devices
Pyroelectric PbTiO3 thin films devices with two temperature compensating elements on a SiO2/Si3N4 membranes have been fabricated and characterized. The measured voltage responsivity as a function of radiation modulation frequency has been compared to finite element model calculation. The relevant film properties have been compared for sputter and a sol-gel deposition techniques. The calculated responsivity amounts to 30 V/W. The measured pyroelectric signal is a few mu V.
Type
research article
Web of Science ID
WOS:A1995TP60800018
Author(s)
Kohli, Markus
Huang, Yuhong
Maeder, Thomas
Wuethrich, Christian
Bell, Andrew
Ryser, Peter
Forster, Martin
Date Issued
1995
Publisher
Published in
Volume
29
Issue
1-4
Start page
93
End page
96
Note
Kohli, M Ecole Polytech Fed Lausanne,Lab Ceram,Ch-1015 Lausanne,Switzerland, Tp608, Times Cited:21, Cited References Count:7
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
August 21, 2006
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