Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling

A tunnel field effect transistor (TFET), including a source region, a gate region, a channel region, and a drain region, the gate region including a gate stack, wherein an area of the source region that is facing the channel region is overlapped by the gate stack.


Year:
2018
Keywords:
Other identifiers:
EPO Family ID: 60911088
Patent number(s):
Laboratories:




 Record created 2019-12-05, last modified 2020-04-20


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