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patent
Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling
2018
A tunnel field effect transistor (TFET), including a source region, a gate region, a channel region, and a drain region, the gate region including a gate stack, wherein an area of the source region that is facing the channel region is overlapped by the gate stack.
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Type
patent
EPO Family ID
60911088
Inventors
TTO classification
TTO:6.1609
Patent number | Country code | Kind code | Date issued |
US2018012659 | US | A1 | 2018-01-11 |
Available on Infoscience
December 5, 2019