Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
Zhang, Chunmin; Jazaeri, Farzan; Borghello, Giulio; Mattiazzo, Serena; Baschirotto, Andrea; Enz, Christian
2018

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Abstract

This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems.

Details

Title Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
Author(s) Zhang, Chunmin ; Jazaeri, Farzan ; Borghello, Giulio ; Mattiazzo, Serena ; Baschirotto, Andrea ; Enz, Christian
Published in Proceedings of 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference
Pagination 3
Conference 2018 IEEE Nuclear Science Symposium Conference Record , Sydney, Australia, November 11-17, 2018
Date 2018
ISBN 978-1-5386-8494-8
Keywords
Note This work was supported in part by the GigaRadMOST project funded by the Swiss National Science Foundation under Grant 200021_160185 and in part by the ScalTech28 project funded by the Istituto Nazionale di Fisica Nucleare.
DOI https://doi.org/10.1109/NSSMIC.2018.8824379
Laboratories ICLAB
Record Appears in Scientific production and competences > EPFL Partners > Neuchâtel Campus > ICLAB - Integrated Circuits Laboratory
Scientific production and competences > STI - School of Engineering > STI Archives > ICLAB - Integrated Circuits Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Record creation date 2019-04-01

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