conference paper
Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
2018
Proceedings of 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference
This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems.
Type
conference paper
Author(s)
Date Issued
2018
Published in
Proceedings of 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference
ISBN of the book
978-1-5386-8494-8
Total of pages
3
Note
This work was supported in part by the GigaRadMOST project funded by the Swiss National Science Foundation under Grant 200021_160185 and in part by the ScalTech28 project funded by the Istituto Nazionale di Fisica Nucleare.
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
Sydney, Australia | November 11-17, 2018 | |
Available on Infoscience
April 1, 2019
Use this identifier to reference this record