Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Transistors with integrated ferroelectrics could (i) enable a better switch (i.e., offer steeper subthreshold swings), (ii) are CMOS compatible, (iii) have multiple operating modes (i.e., I-V characteristics can also enable compact, 1-transistor, non-volatile storage elements, as well as analog synaptic behavior), and (iv) have been experimentally demonstrated (i.e., with respect. to all of the aforementioned operating modes). These device level characteristics offer unique opportunities at the circuit, architectural, and system-level, and are considered here from device, circuit/architecture, and foundry-level perspectives.


Publié dans:
Design, Automation and Test in Europe Conference and Exhibition (DATE), 1289-1298
Présenté à:
Proceedings Of The 2018 Design, Automation & Test In Europe Conference & Exhibition (Date), Dresden, GERMANY, Mar 19-23, 2018
Année
2018
Publisher:
IEEE
ISSN:
1530-1591
ISBN:
978-3-9819-2630-9
Mots-clefs:
Laboratoires:




 Notice créée le 2018-11-08, modifiée le 2018-12-17


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