Notice détaillée
Titre
LASPE
Formal Name (French)
Laboratoire en semiconducteurs avancés pour la photonique et l'électronique
Formal Name (English)
Laboratory of Advanced Semiconductors for Photonics and Electronics
Lab Manager
Grandjean, Nicolas
Group ID
U10946
Auteurs affilié
Altoukhov, Alexei
Bampis, Alexandros
Brunetta, Samuele
Butté, Raphaël
Callsen, Gordon
Caloz, Misaël
Carlin, Jean-François
Castiglia, Antonino
Chen, Danxuan
Chen, Yao
Chipaux, Mayeul Sylvain
Ciers, Joachim
Cobet, Munise Nevin
Cosendey, Gatien
Dekumbis, Nadja
Demolon, Pierre Jean-François Jules
Di Paola, Davide Maria
Ducanchez, Arnaud
Dupertuis, Marc-André
Dussaigne, Amélie
Floriduz, Alessandro
Giraud, Etienne François Olivier
Glauser, Marlene
Grandjean, Nicolas
Haller, Camille
Hefyene, Nasser
Jabeen, Fauzia
Jacopin, Gwénolé Jean
Kaufmann, Nils Asmus Kristian
Khrypunov, Gennadiy
Lahourcade, Lise
Lamy, Jean-Michel Jacques
Levrat, Jacques
Liaugaudas, Gediminas
Liu, Wei
Lottigier, Pierre
Lugani, Lorenzo
Lupatini, Mirko
Malinverni, Marco
Morier-Genoud, François
Napierala, Jérôme
Navadeh Toupchi, Morteza
Naville, Melissa
Oberli, Daniel
Portella Oberli, Marcia
Périllat-Merceroz, Guillaume
Rodriguez Mateos, Borja
Rossbach, Georg
Rousseau, Ian
Shirzad, Hoda
Shojiki, Kanako
Stachurski, Johann
Stanczyk, Szymon
Sulmoni, Luca Alex Milo
Tamariz Kaufmann, Sebastian Pascal
Theytaz, Adrien Yves
Tonin, Mario Lucien Henri
Toschi, Anna
Trolliet, Damien
Vico Triviño, Noelia
Wang, Jun
Weatherley, Thomas Fjord Kjaersgaard
Zhang, Hezhi
Bampis, Alexandros
Brunetta, Samuele
Butté, Raphaël
Callsen, Gordon
Caloz, Misaël
Carlin, Jean-François
Castiglia, Antonino
Chen, Danxuan
Chen, Yao
Chipaux, Mayeul Sylvain
Ciers, Joachim
Cobet, Munise Nevin
Cosendey, Gatien
Dekumbis, Nadja
Demolon, Pierre Jean-François Jules
Di Paola, Davide Maria
Ducanchez, Arnaud
Dupertuis, Marc-André
Dussaigne, Amélie
Floriduz, Alessandro
Giraud, Etienne François Olivier
Glauser, Marlene
Grandjean, Nicolas
Haller, Camille
Hefyene, Nasser
Jabeen, Fauzia
Jacopin, Gwénolé Jean
Kaufmann, Nils Asmus Kristian
Khrypunov, Gennadiy
Lahourcade, Lise
Lamy, Jean-Michel Jacques
Levrat, Jacques
Liaugaudas, Gediminas
Liu, Wei
Lottigier, Pierre
Lugani, Lorenzo
Lupatini, Mirko
Malinverni, Marco
Morier-Genoud, François
Napierala, Jérôme
Navadeh Toupchi, Morteza
Naville, Melissa
Oberli, Daniel
Portella Oberli, Marcia
Périllat-Merceroz, Guillaume
Rodriguez Mateos, Borja
Rossbach, Georg
Rousseau, Ian
Shirzad, Hoda
Shojiki, Kanako
Stachurski, Johann
Stanczyk, Szymon
Sulmoni, Luca Alex Milo
Tamariz Kaufmann, Sebastian Pascal
Theytaz, Adrien Yves
Tonin, Mario Lucien Henri
Toschi, Anna
Trolliet, Damien
Vico Triviño, Noelia
Wang, Jun
Weatherley, Thomas Fjord Kjaersgaard
Zhang, Hezhi
Institut
IPHYS
Faculté
SB
Note
Members of LASPE-unit
Lien extérieur
http://laspe.epfl.ch/
Publications
(In,Al)N-based blue microcavity lasers
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response
High-occupancy effects and stimulation phenomena in semiconductor microcavities
Lattice-matched AlInN alloys for nitride-based optoelectronic devices
Stimulated polariton scattering in semiconductor microcavities: New physics and potential applications
Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures
Study of the epitaxial relationships between III-nitrides and M-plane sapphire
Testing the Temperature Limits of GaN-Based HEMT Devices
Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon
Voir toutes les publications (646)
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response
High-occupancy effects and stimulation phenomena in semiconductor microcavities
Lattice-matched AlInN alloys for nitride-based optoelectronic devices
Stimulated polariton scattering in semiconductor microcavities: New physics and potential applications
Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures
Study of the epitaxial relationships between III-nitrides and M-plane sapphire
Testing the Temperature Limits of GaN-Based HEMT Devices
Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon
Voir toutes les publications (646)
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