Notice détaillée
Titre
Kaufmann, Nils Asmus Kristian
Sciper ID
188804
Laboratoires affiliés
LASPE
Publications
Critical impact of Ehrlich-Schwobel barrier on GaN surface morphology during homoepitaxial growth
Investigation of indium-rich InGaN alloys and kinetic growth regime of GaN
Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green
Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well
Investigation of indium-rich InGaN alloys and kinetic growth regime of GaN
Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green
Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well
Employé pour
Kaufmann, Nils
Kaufmann, Nils A. K.
Kaufmann, N. A. K.
Kaufmann, Nils. A. K.
Kaufmann, Nils A. K.
Kaufmann, N. A. K.
Kaufmann, Nils. A. K.
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