Notice détaillée
Titre
Cosendey, Gatien
Sciper ID
160491
Publications
Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers
AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates
Broadband blue superluminescent light-emitting diodes based on GaN
GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer
Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
Investigation of InGaN/GaN quantum wells for polariton laser diodes
Optically pumped long external cavity InGaN/GaN surface-emitting laser with injection seeding from a planar microcavity
Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques
Tailoring the light-matter coupling in anisotropic microcavities: Redistribution of oscillator strength in strained m-plane GaN/AlGaN quantum wel[...]
Towards room temperature electrically pumped blue vertical cavity surface emitting lasers
Voir toutes les publications (20)
AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates
Broadband blue superluminescent light-emitting diodes based on GaN
GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer
Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
Investigation of InGaN/GaN quantum wells for polariton laser diodes
Optically pumped long external cavity InGaN/GaN surface-emitting laser with injection seeding from a planar microcavity
Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques
Tailoring the light-matter coupling in anisotropic microcavities: Redistribution of oscillator strength in strained m-plane GaN/AlGaN quantum wel[...]
Towards room temperature electrically pumped blue vertical cavity surface emitting lasers
Voir toutes les publications (20)
Employé pour
Cosendey, G.
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