820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2
2018
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Title
820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2
Author(s)
Khadar, Riyaz Abdul ; Liu, Chao ; Zhang, Liyang ; Xiang, Peng ; Cheng, Kai ; Matioli, Elison
Published in
IEEE Electron Device Letters
Volume
39
Issue
3
Pages
401-404
Date
2018
ISSN
1558-0563
Laboratories
POWERLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > POWERLAB - Power and Wide-band-gap Electronics Research Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Grant
H2020: 679425
Record creation date
2018-01-17