820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2

Khadar, Riyaz Abdul; Liu, Chao; Zhang, Liyang; Xiang, Peng; Cheng, Kai; Matioli, Elison

doi:10.1109/LED.2018.2793669

research article

820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2

Khadar, Riyaz Abdul

•

Liu, Chao

•

Zhang, Liyang

2018

IEEE Electron Device Letters

Cite this item

Khadar, R. A., Liu, C., Zhang, L., Xiang, P., Cheng, K., & Matioli, E. (2018). 820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2. IEEE Electron Device Letters, 39(3), 401–404. https://doi.org/10.1109/LED.2018.2793669

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