Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Journal articles
  4. Elevated transition temperature in Ge doped VO2 thin films
 
research article

Elevated transition temperature in Ge doped VO2 thin films

Krammer, Anna  
•
Magrez, Arnaud
•
Vitale, Wolfgang A.
Show more
2017
Journal Of Applied Physics

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (similar to 95 degrees C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications-where higher critical temperatures than 68 degrees C of pristine VO2 are needed-a viable and promising solution. Published by AIP Publishing.

  • Files
  • Details
  • Metrics
Loading...
Thumbnail Image
Name

Elevated transition temperature in Ge doped VO2 thin films.pdf

Type

Publisher's Version

Version

http://purl.org/coar/version/c_970fb48d4fbd8a85

Access type

embargo

Embargo End Date

2018-07-27

License Condition

CC BY-SA

Size

1.53 MB

Format

Adobe PDF

Checksum (MD5)

49e1d504a72faeb8c9f33b00c8a14930

Loading...
Thumbnail Image
Name

1.4995965(1).pdf

Access type

embargo

Embargo End Date

2018-07-27

License Condition

CC BY-SA

Size

1.8 MB

Format

Adobe PDF

Checksum (MD5)

e2fe4b85d576924b7a538f391db60116

Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés