Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon
2016
Abstract
We present a temperature dependent optical and quantum-optical characterization of close-to-ideal lasing in GaN-based nanobeam cavities. Measuring the photon statistics of emission allows us to prove high-beta lasing at room temperature, and thresholdless lasing at 156K. Thresholdless lasing is explained via temperature dependent carrier redistribution in the 0D/2D gain medium.
Details
Title
Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon
Author(s)
Jagsch, Stefan Thomas ; Trivino, Noelia Vico ; Callsen, Gordon ; Kalinowski, Stefan ; Rousseau, Ian Michael ; Carlin, Jean-Francois ; Butte, Raphael ; Hoffmann, Axel ; Grandjean, Nicolas ; Reitzenstein, Stephan
Published in
2016 International Semiconductor Laser Conference (Islc)
Pagination
2
Series
IEEE International Semiconductor Laser Conference
Conference
25th International Semiconductor Laser Conference (ISLC), Kobe, JAPAN, SEP 12-15, 2016
Date
2016
Publisher
New York, Ieee
ISSN
2326-5442
ISBN
978-4-8855-2306-9
Keywords
Other identifier(s)
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Laboratories
LASPE
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Conference Papers
Published
Peer-reviewed publications
Work outside EPFL
Conference Papers
Published
Record creation date
2017-02-17