LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics

Latest additions

• 2017-07-10
  13:36
  C. Durand, J.-F. Carlin, C. Bougerol, B. Gayral and D. Salomon et al. Thin-Wall GaN/InAlN Multiple Quantum Well Tubes, in Nano Letters, vol. 17, num. 6, p. 3347-3355, 2017.

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• 2017-05-30
  17:06
  M. Shahmohammadi, W. Liu, G. Rossbach, L. Lahourcade and A. Dussaigne et al. Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells, in Physical Review B, vol. 95, num. 12, p. 125314, 2017.

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• 2017-05-30
  17:06
  I. Rousseau, I. Sanchez-Arribas, K. Shojiki, J.-F. Carlin and R. Butte et al. Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range, in Physical Review B, vol. 95, num. 12, p. 125313, 2017.

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• 2017-05-30
  17:06
  J. Ciers, J. G. Roch, J. F. Carlin, G. Jacopin and R. Butte et al. Propagating Polaritons in III-Nitride Slab Waveguides, in Physical Review Applied, vol. 7, num. 3, p. 034019, 2017.

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• 2017-05-30
  17:06
  M. Krames and N. Grandjean. Light-emitting diode technology and applications: introduction, in Photonics Research, vol. 5, num. 2, p. LED1-LED2, 2017.

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• 2017-05-01
  17:04
  M. S. Mohamed, A. Simbula, J.-F. Carlin, M. Minkov and D. Gerace et al. Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon, in APL Photonics, vol. 2, num. 3, p. 031301, 2017.

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• 2017-05-01
  17:02
  T. Braniste, J. Ciers, E. Monaico, D. Martin and J. F. Carlin et al. Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications, in Superlattices And Microstructures, vol. 102, p. 221-234, 2017.

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• 2017-02-17
  12:13
  H. Okumura, D. Martin and N. Grandjean. Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN, in Applied Physics Letters, vol. 109, num. 25, p. 252101, 2016.

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• 2017-02-17
  12:13
  V. Portz, M. Schnedler, L. Lymperakis, J. Neugebauer and H. Eisele et al. Fermi-level pinning and intrinsic surface states of Al1-xInxNd(10(1)over-bar0) surfaces, in Applied Physics Letters, vol. 110, num. 2, p. 022104, 2017.

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• 2017-02-17
  12:08
  S. T. Jagsch, N. V. Trivino, G. Callsen, S. Kalinowski and I. M. Rousseau et al. Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon. 25th International Semiconductor Laser Conference (ISLC), Kobe, JAPAN, SEP 12-15, 2016. , IEEE International Semiconductor Laser Conference.

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