Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K


Published in:
2016 74th Annual Device Research Conference (DRC), 1-2
Presented at:
2016 74th Annual Device Research Conference (DRC), Newark, DE, USA, 19-22 June 2016
Year:
2016
Publisher:
New York, IEEE
Laboratories:




 Record created 2016-10-17, last modified 2018-03-18


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