Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

We report a thorough investigation of the electrically-induced metal-insulator transition in vanadium dioxide (VO2) for abrupt switching in 2-terminal devices (0.24 mV/dec at 25 °C, 0.38 mV/dec at 50 °C). We exploit the electrothermal actuation model based on Joule heating to model and predict the low temperature dependence of the slope in VO2 switches.


Published in:
2016 IEEE Silicon Nanoelectronics Workshop (SNW), 180-181
Presented at:
2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016
Year:
2016
Publisher:
New York, IEEE
Laboratories:




 Record created 2016-10-14, last modified 2018-03-18


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