conference paper
Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope
2016
2016 IEEE Silicon Nanoelectronics Workshop (SNW)
We report a thorough investigation of the electrically-induced metal-insulator transition in vanadium dioxide (VO2) for abrupt switching in 2-terminal devices (0.24 mV/dec at 25 °C, 0.38 mV/dec at 50 °C). We exploit the electrothermal actuation model based on Joule heating to model and predict the low temperature dependence of the slope in VO2 switches.