Conference paper

Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects

We present a quasi-waveguide angled facet electroabsorption modulator with a contrast ratio greater than 3 dB between 1496 nm and 1506 nm for 1 V drive as well as a misalignment tolerance of 30 mum.


    17th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society, Rio Grande, PR, NOV 07-11, 2004


    • EPFL-CONF-220861

    Record created on 2016-08-16, modified on 2017-05-10


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