FOSS EKV 2.6 parameter extractor
The design of advanced integrated circuits (IC) in particular for low power analog and radio-frequency (RF) application becomes more complex as the device level modeling confronting challenges in micro- and nano-meter CMOS processes. As present CMOS technologies continue geometry scaling the designers can benefit using dedicated SPICE MOSFET models and apply specific analog design methodologies. The EKV was developed especially to meet altogether the analog/RF design requirements. This paper describes a basic set of the DC parameter extraction steps for the EKV 2.6 model. The free open source software (FOSS) Profile2D tool was used to illustrate accurate EKV 2.6 DC extraction strategy.
WOS:000364071600034
2015
978-8-3635-7806-0
New York
6
181
186
REVIEWED
Event name | Event place | Event date |
Torun | 25-27 June 2015 | |