Magnetization of semiconductor quantum dots

We present experimental studies of the magnetization of electrons in semiconductorquantum dots. Starting from a modulation-doped AlGaAs/GaAs heterostructure an array of dots was patterned by laser-interference lithography and deep mesa etching. The quantum-dot array was integrated into a highly sensitive micromechanical cantilever magnetometer. At a temperature of 0.3 K we observe pronounced oscillations in the magnetization. With regard to their periodicity and temperature dependence they differ from the de Haas–van Alphen effect observed in a two-dimensional electron system. We find that the magnetization calculated from the single-particle Fock–Darwin energies of a quantum dot does not reproduce the experiment. From this we conclude that the electronic ground state of the dots is strongly influenced by electron–electron interaction.


Published in:
Journal of Applied Physics, 91, 10, 6875
Year:
2002
Publisher:
American Institute of Physics
ISSN:
0021-8979
Laboratories:




 Record created 2015-07-08, last modified 2018-09-13


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