Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell

In this work we report experimental results on the use of Tunnel Field-Effect Transistors (TFET) as capacitorless Dynamic Random Access Memory (DRAM) cells, implemented as a double-gate (DG) Fully-Depleted Silicon-On-Insulator (FD-SOI) devices. The devices have an asymmetric design, with a partial overlap of the top gate (LG) with a total overlap of the back gate over the channel region (LG+LIN). A potential well is created by biasing the back gate (VBG) in accumulation while the front gate (VFG) is in inversion. Holes from the p+ source are injected by the forward-biased p+i junction and stored in the electrically induced potential well.


Publié dans:
Applied Physics Letters, 104, 9, 092108
Année
2014
Publisher:
Melville, American Institute of Physics
ISSN:
0003-6951
Mots-clefs:
Laboratoires:




 Notice créée le 2014-02-24, modifiée le 2018-03-17

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