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research article

Investigation of the dominant 1/f noise source in silicon nanowire sensors

Bedner, Kristine
•
Guzenko, Vitaliy A.
•
Tarasov, Alexey
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2014
Sensors And Actuators B-Chemical

We analyzed 1/f noise in silicon nanowire ion-sensitive field-effect transistors (SiNW-ISFETs) having different wire widths ranging from 100 nm to 1 pin and operated under different gating conditions in order to determine the noise source and the sensor accuracy. We find that the gate-referred voltage noise S-VG (power spectral density) is constant over a large range of SiNWs resistances tuned by a DC gate voltage. The measurements of S-VG for SiNWs with two different gate-oxide thicknesses, but otherwise similar device parameters, are only compatible with the so-called trap state noise model in which the source of 1/f noise is due to trap states residing in the gate oxide (most likely in the interface between the semiconductor and the oxide). S-VG is found to be inversely proportional to the wire width for constant wire length. From the noise data we determine a sensor accuracy of 0.017% of a full Nernstian shift of 60 mV/pH for a SiNW wire with a width of 1 pm. No influence of the ions in the buffer solution was found. (C) 2013 Elsevier B.V. All rights reserved.

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Type
research article
DOI
10.1016/j.snb.2013.09.112
Web of Science ID

WOS:000327771500038

Author(s)
Bedner, Kristine
Guzenko, Vitaliy A.
Tarasov, Alexey
Wipf, Mathias
Stoop, Ralph L.
Rigante, Sara  
Brunner, Jan
Fu, Wangyang
David, Christian
Calame, Michel
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Date Issued

2014

Publisher

Elsevier

Published in
Sensors And Actuators B-Chemical
Volume

191

Start page

270

End page

275

Subjects

1/f noise

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Silicon nanowire sensor

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Ion sensitive field effect transistor

•

Noise source

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
January 9, 2014
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/99147
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