High-k dielectric FinFETs towards Sensing Integrated Circuits

This work presents a well-defined electronic device, namely a n-channel high-k dielectric FinFET (Fin Field Effect Transistor) as new label-free sensor for enhanced sensing integrated circuits. Metal gate FinFETs on bulk Si have been successfully electrically characterized, showing excellent SS (Subthreshold Slope) and high I-on/I-off ratio. Exposed n-channel FinFETs, integrated on the same die, have been demonstrated pH sensitive with high current variation per pH unit. Herein, we also describe the fabrication process, assisted by FEA (Finite Element Analysis) simulations, and the HfO2 characterization.


Published in:
2013 14Th International Conference On Ultimate Integration On Silicon (Ulis), 73-76
Presented at:
14th International Conference on Ultimate Integration on Silicon (ULIS)
Year:
2013
Publisher:
New York, IEEE
ISSN:
2330-5738
ISBN:
978-1-4673-4802-7
Keywords:
Laboratories:




 Record created 2013-12-09, last modified 2018-09-13


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