This work presents a well-defined electronic device, namely a n-channel high-k dielectric FinFET (Fin Field Effect Transistor) as new label-free sensor for enhanced sensing integrated circuits. Metal gate FinFETs on bulk Si have been successfully electrically characterized, showing excellent SS (Subthreshold Slope) and high I-on/I-off ratio. Exposed n-channel FinFETs, integrated on the same die, have been demonstrated pH sensitive with high current variation per pH unit. Herein, we also describe the fabrication process, assisted by FEA (Finite Element Analysis) simulations, and the HfO2 characterization.