A novel high-throughput on-wafer electromechanical sensitivity characterization system for piezoresistive cantilevers

In this work we present the development of a new set-up that allows on-wafer sensitivity characterization of piezoresistive cantilevers. In this way we reduce considerably the testing time compared to the techniques available up to date but at the same time we maintain a high measurement precision. Moreover it can be easily used for characterization of broad types of batch fabricated micro- and nanoelectromechanical systems (MEMS and NEMS). Together with the sensitivity measurement we present also the methods to test the cantilever spring constant and the electrical noise. Using these techniques we measured the performance of multiple piezoresistive cantilevers in two wafers and from these values we extracted important fabrication materials parameters such as Young modulus, Hooge and piezoresistive factors. © 2012 IEEE.


Published in:
26th IEEE International Conference on Microelectronic Test Structures (ICMTS), 55-60
Presented at:
26th IEEE International Conference on Microelectronic Test Structures (ICMTS), San Diego, USA, 2012
Year:
2012
Laboratories:




 Record created 2013-08-06, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)