Growth-mode induced defects in epitaxial SrTiO3 thin films grown on single crystal LaAlO3 by a two-step PLD process

We grew epitaxial SrTiO3 (STO) thin films on (001) LaAlO3 substrates via a two-step procedure using pulsed laser deposition and studied them with transmission electron microscopy in plane-view and cross-sectional samples. We found that partial misfit dislocations are the main interfacial defects, whereas planar defects are the main defects in STO films. Our results suggest that a three-dimensional island mode dominates the growth of the STO film.


Published in:
Journal of Materials Research, 26, 06, 770-774
Year:
2011
ISSN:
2044-5326
Keywords:
Laboratories:




 Record created 2011-08-11, last modified 2018-12-03


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