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  4. Growth-mode induced defects in epitaxial SrTiO3 thin films grown on single crystal LaAlO3 by a two-step PLD process
 
research article

Growth-mode induced defects in epitaxial SrTiO3 thin films grown on single crystal LaAlO3 by a two-step PLD process

Su, Dong  
•
Yamada, Tomoaki  
•
Gysel, Roman  
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2011
Journal of Materials Research

We grew epitaxial SrTiO3 (STO) thin films on (001) LaAlO3 substrates via a two-step procedure using pulsed laser deposition and studied them with transmission electron microscopy in plane-view and cross-sectional samples. We found that partial misfit dislocations are the main interfacial defects, whereas planar defects are the main defects in STO films. Our results suggest that a three-dimensional island mode dominates the growth of the STO film.

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