Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Conferences, Workshops, Symposiums, and Seminars
  4. Si and Mg doped GaN layers grown by gas source molecular beam epitaxy using ammonia
 
conference paper

Si and Mg doped GaN layers grown by gas source molecular beam epitaxy using ammonia

Massies, J.
•
Leroux, M.
•
Grandjean, N.  
1998
Nitride Semiconductors
Symposium on Nitride Semiconductors, at the 1997 MRS Fall Meeting

The growth of GaN layers was carried out on c-plane sapphire substrates by molecular beam epitaxy (MBE) using NH3. Undoped GaN layers were grown at 830 degrees C with growth rates larger than 1 mu m/h. Optical properties are characteristics of high quality GaN material and the linewidth of x-ray diffraction (0002) rocking curve is less than 350 arcsec. N-and p-type doping were achieved by using solid sources of Si and Mg. No post-growth annealing was needed to activate the Mg accepters. As-grown GaN:Mg layers exhibit hole concentrations of 3x10(17) cm(-3) and mobilities of 8 cm(2)/Vs at 300 K. Light emitting diodes (LEDs) based on GaN p-n homojunction have been processed. The turn on voltage is 3 V and the forward voltage is 3.7 V at 20 mA. The 300 K electroluminescence (EL) peaks at 390 nm.

  • Details
  • Metrics
Type
conference paper
DOI
10.1557/PROC-482-211
Author(s)
Massies, J.
Leroux, M.
Grandjean, N.  
Date Issued

1998

Publisher

Materials Research Society

Published in
Nitride Semiconductors
Series title/Series vol.

Materials Research Society Symposium Proceedings; 482

Start page

211

End page

216

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LASPE  
Event nameEvent placeEvent date
Symposium on Nitride Semiconductors, at the 1997 MRS Fall Meeting

BOSTON, MA

Dec 01-05, 1997

Available on Infoscience
October 13, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55453
Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés