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conference paper
AlInN as high-index-contrast material for GaN-based optoelectronics
2004
2003 International Symposium On Compound Semiconductors: Post-Conference Proceedings
High quality AlInN was grown near lattice-matched to GaN. It shows about 7% index contrast with GaN. AlInN is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN distributed Bragg reflector with over 90% reflectivity. Light emitting diodes with active layers grown on top of AlInN/GaN multi-layers exhibit internal quantum efficiencies comparable to those of reference diodes grown directly on GaN buffer, this further demonstrate that AlInN material quality can meet the needs of optoelectronic application.
Type
conference paper
Authors
Publication date
2004
Publisher
Published in
2003 International Symposium On Compound Semiconductors: Post-Conference Proceedings
Start page
36
End page
41
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
San Diego, CA | Aug 25-27, 2003 | |
Available on Infoscience
October 13, 2010
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