Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures
Thermally detected optical absorption (TDOA) and photoluminescence (PL) experiments are performed at 0.35 and 4 K, respectively, on InxGa1-xN(x less than or equal to 0.12) layers grown on GaN by molecular beam epitaxy. The modelling of absorption allows us to extract the absorption coefficients and bandgap energies of (In,Ga)N alloy. A bowing parameter equal to 2.4 eV is deduced. The knowledge of the GaN complex refractive index, previously measured, enables us to account for the Fabry-Perot interferences which structure the TDOA and PL spectra. A procedure is proposed to remove the latter in the PL spectrum of nitride based heterostructures, The model is based on the description of the light propagation in an active layer sandwiched between two heterostructures. The parameters deduced from the absorption line shape adjustment are used to take the absorption and optical path into account in the different layers of the samples. (C) 2000 Elsevier Science Ltd. All rights reserved.
Keywords: semiconductors ; thin films ; optical properties ; light absorption and ; reflection ; luminescence ; CHEMICAL-VAPOR-DEPOSITION ; INXGA1-XN ALLOYS ; BAND-GAP ; WELL ; SPECTROSCOPY ; GA1-XINXN ; EPITAXY ; INGAN ; LASER
Record created on 2010-10-05, modified on 2016-08-08