IMPROVEMENT OF THE GROWTH OF INXGA1-XAS ON GAAS (001) USING TE AS SURFACTANT
1993
Abstract
It is demonstrated by using reflection high-energy electron diffraction and transmission electron microscopy that the epitaxial growth of highly strained InxGa1-xAs (x>0.3) layers on GaAs(001) is improved by a preadsorbed Te surfactant layer. The formation of 3D islands is inhibited by the surfactant action and consequently the onset of plastic relaxation (i.e., the critical thickness) is significantly delayed.
Details
Title
IMPROVEMENT OF THE GROWTH OF INXGA1-XAS ON GAAS (001) USING TE AS SURFACTANT
Author(s)
Grandjean, N. ; Massies, J. ; Delamarre, C. ; Wang, L. P. ; Dubon, A. ; Laval, J. Y.
Published in
Applied Physics Letters
Volume
63
Issue
1
Pages
66-68
Date
1993
ISSN
0003-6951
Keywords
Laboratories
LASPE
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date
2010-10-05