Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides

We investigate the dielectric permittivity of SiO2 on Si(100) substrates using a first-principles approach. It is shown that both the static and high-frequency dielectric constants of the oxide overlayer increase when the oxide thickness is reduced. This behavior of the overlayer is found to be well reproduced by a classical two-layer model in which the pure oxide and the suboxide layer are treated as distinct dielectrics. Implications for interfaces between silicon and high-k gate oxides are discussed. (C) 2004 Elsevier B.V. All rights reserved.


Published in:
Microelectronic Engineering, 72, 1-4, 299-303
Year:
2004
ISSN:
0167-9317
Other identifiers:
Laboratories:




 Record created 2009-10-08, last modified 2018-03-17


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