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research article
Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides
We investigate the dielectric permittivity of SiO2 on Si(100) substrates using a first-principles approach. It is shown that both the static and high-frequency dielectric constants of the oxide overlayer increase when the oxide thickness is reduced. This behavior of the overlayer is found to be well reproduced by a classical two-layer model in which the pure oxide and the suboxide layer are treated as distinct dielectrics. Implications for interfaces between silicon and high-k gate oxides are discussed. (C) 2004 Elsevier B.V. All rights reserved.
Type
research article
Web of Science ID
WOS:000221017500055
Authors
Publication date
2004
Published in
Volume
72
Issue
1-4
Start page
299
End page
303
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 8, 2009
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