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  4. Quantitative (200) dark-field imaging of InGaAs/GaAs layers : measurement of chemical composition and strain effects
 
research article

Quantitative (200) dark-field imaging of InGaAs/GaAs layers : measurement of chemical composition and strain effects

Cagnon, J
•
Buffat, PA  
•
Stadelmann, PA  
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2001
Inst. Phys. Conf. Ser.
  • Details
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Type
research article
Web of Science ID

WOS:000176465200008

Author(s)
Cagnon, J
Buffat, PA  
Stadelmann, PA  
Leifer, K  
Date Issued

2001

Published in
Inst. Phys. Conf. Ser.
Volume

169

Start page

37

End page

40

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
CIME  
Available on Infoscience
February 15, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/3017
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