Substitutional p‐type Doping in NbS2‐MoS2 Lateral Heterostructures Grown by MOCVD
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Wang, Z., Tripathi, M., Golsanamlou, Z., Kumari, P., Lovarelli, G., Mazziotti, F., Logoteta, D., Fiori, G., Sementa, L., Marega, G. M., Ji, H. G., Zhao, Y., Radenovic, A., Iannaccone, G., Fortunelli, A., & Kis, A. (2023). Substitutional p‐type Doping in NbS2‐MoS2 Lateral Heterostructures Grown by MOCVD. Advanced Materials, Article 2209371. https://doi.org/10.1002/adma.202209371
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Advanced Materials - 2023 - Wang - Substitutional p‐Type Doping in NbS2 MoS2 Lateral Heterostructures Grown by MOCVD.pdf
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