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  4. Substitutional p‐type Doping in NbS2‐MoS2 Lateral Heterostructures Grown by MOCVD
 
research article

Substitutional p‐type Doping in NbS2‐MoS2 Lateral Heterostructures Grown by MOCVD

Wang, Zhenyu  
•
Tripathi, Mukesh  
•
Golsanamlou, Zahra
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January 16, 2023
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Type
research article
DOI
10.1002/adma.202209371
Author(s)
Wang, Zhenyu  
Tripathi, Mukesh  
Golsanamlou, Zahra
Kumari, Poonam
Lovarelli, Giuseppe
Mazziotti, Fabrizio
Logoteta, Demetrio
Fiori, Gianluca
Sementa, Luca
Marega, Guilherme Migliato  
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Date Issued

2023-01-16

Publisher

Wiley

Published in
Advanced Materials
Article Number

2209371

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LANES  
LBEN  
Available on Infoscience
February 28, 2023
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/195342
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