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  4. Gate-all-around MOSFETs: true fabrication and characteristics
 
conference paper

Gate-all-around MOSFETs: true fabrication and characteristics

Pott, V.  
•
Bouvet, D.  
•
Moselund, K. E.  
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2006
SINANO workshop on silicon nanodevices, Beyond CMOS: Emerging devices
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Type
conference paper
Author(s)
Pott, V.  
Bouvet, D.  
Moselund, K. E.  
Ionescu, A. M.  
Date Issued

2006

Published in
SINANO workshop on silicon nanodevices, Beyond CMOS: Emerging devices
Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
May 16, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/6994
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