Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

Dainesi, P.; Moselund, K. E.; Thévenaz, Luc; Ionescu, A. M.

doi:10.1109/CLEO.2005.201693

conference paper

Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

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2006

Proceedings of the 2005 Conference on Lasers and Electro-Optics

2005 Conference on Lasers and Electro-Optics (CLEO)

We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices.

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Dainesi-2005-Fast and efficient l.pdf

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