conference paper
Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator
2006
Proceedings of the 2005 Conference on Lasers and Electro-Optics
We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices.
Type
conference paper
Web of Science ID
WOS:000234819900038
Date Issued
2006
Publisher
Published in
Proceedings of the 2005 Conference on Lasers and Electro-Optics
Volume
1
Start page
110
End page
112
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
Baltimore, USA | 2005 | |
Available on Infoscience
May 16, 2007
Use this identifier to reference this record